Source: School of Electronics and Information Technology
Written by: School of Electronics and Information Technology
Edited by: Wang Dongmei

Recently, a paper titled “Dual-Gate Photosensitive FIN-TFT with High Photoconductive Gain and Near-UV to Near-IR Responsivity” from the School of Electronics and Information Technology at Sun Yat-sen University was accepted as an oral presentation by the prestigious IEEE International Electron Device Meeting (IEDM2016). The work was led by Prof. Kai Wang from the School of Electronics and Information Technology (SYSU-CMU Joint Institute of Engineering) in collaboration with Prof. Jun Chen from the School of Electronics and Information Technology at Sun Yat-sen University (SYSU). The first author of this paper is Hai Ou, a Ph.D. student from the School of Electronics and Information Engineering co-advised by Prof. Wang and Prof. Chen. With this work, Sun Yat-sen University becomes the fifth university in Mainland China to present at IEDM in addition to Peking University, Tsinghua University, Fudan University and Zhejiang University.

In this paper, a novel three-dimensional (3D) FIN-shaped dual-gate amorphous silicon thin-film transistor (TFT) was reported for the first time. The 3D FIN-TFT demonstrates excellent switching performance and photosensitivity characteristics with a photoconductive gain over 100 from near-ultraviolet to near-infrared wavelengths, making a great promise in large-area, highly-sensitive biomedical imaging and low-level light detection in a broad band. In the past two years, Sun Yat-sen University researchers have made a significant progress on novel TFTs and their emerging applications in large-area X-ray imaging and photodetectors. The previous work has been published in top-tier engineering journals including IEEE Electron Device Letters, IEEE Transactions on Electron Devices, and IEEE Photonics Technology Letters. This research was funded by the Key R & D Program of the Ministry of Science and the National Natural Science Foundation of China, and supported by the State Key Laboratory of Optoelectronic Materials and Technology and the Key Laboratory of Display Materials and Technology of Guangdong Province.

IEDM is the world’s preeminent forum for reporting technological breakthroughs in the areas of semiconductor and electronic device technology, design, manufacturing, physics, and modeling. Since 1955, IEDM has gained tremendous reputation and extensive influence in the field of microelectronics. It is the flagship conference for leading universities, R & D institutions and industry leaders to report on their latest research achievements and cutting-edge technologies. Intel, Samsung, TSMC and other leading semiconductor companies often announce the latest device technologies in this conference. The conference is therefore given the name “Electron Device Olympics”.